kst-9088-000 1 DP050 pnp silicon transistor features extremely low collector-to-emitter saturation voltage ( v ce (sat) = -0.08v typ. @i c /i b =-100ma/-10ma) suitable for low voltage large current drivers complementary pair with dn050 switching application ordering information type no. marking package code DP050 DP050 to-92 outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. emitter 2. collector 3. base
kst-9088-000 2 DP050 absolute m aximum r atings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v collector current i c -500 ma collector dissipation p c 625 mw junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =-50 m a, i e =0 -15 - - v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -12 - - v emitter-base breakdown voltage bv ebo i e =-50 m a, i c =0 -5 - - v collector cut-off current i cbo v cb =-12v, i e =0 - - -0.1 m a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 m a h fe1 v ce =-1v, i c =-100ma 200 - 450 - dc current gain h fe2 v ce =-1 v, i c =-500ma 70 - - - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -0.25 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.2 v transition frequency f t v ce =-5v, i c =-20ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 8.0 - pf
kst-9088-000 3 DP050 fig. 3 h fe - i c fig. 1 p c - t a fig. 5 v ce( sat) - i c electrical characteristic curves fig. 4 i c - v ce fig. 2 i c - v be
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